| PART |
Description |
Maker |
| NP276-16951 NP276-25626 NP276-11904-3 NP276-59608 |
Ball Grid Array (BGA, 1.27mm Pitch)
|
Yamaichi Electronics Co., Ltd.
|
| FBGA-SD |
Fine Pitch Ball Grid Array - Stacked Die
|
STATSCHIP[STATS ChipPAC, Ltd.]
|
| CHC-CH4ALF-01-1002-D-A CHC-CH8ALF-01-1002-D-A CHC- |
Precision Ceramic Ball Grid Arrays
|
IRC - a TT electronics Company.
|
| CSPESD304 |
4-Channel ESD Array in CSP
|
ON Semiconductor
|
| AS4C64M16D3A-12BIN AS4C64M16D3A-12BCN |
96 ball FBGA PACKAGE
|
Alliance Semiconductor ...
|
| M6MGB64BM34CWG M6MGT64BM34CWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas
|
| M6MGB64BM17AWG-P M6MGT64BM17AWG-P |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas
|
| M6MGD13VW34DWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas
|
| M6MGD13VW66CWG-P |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas
|
| K4S51323PF-MF90 K4S51323PF-MF75 K4S51323PF-MF1L K4 |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 LEAD FREE, FBGA-90
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 FBGA-90
4M x 32Bit x 4 Banks Mobile-SDRAM
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
